N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138BK,215

RS tootekood: 124-2289Bränd: NexperiaTootja Part nr.: BSS138BK,215
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.48V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,095

tk (rullis 3000) (ilma käibemaksuta)

€ 0,116

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138BK,215

€ 0,095

tk (rullis 3000) (ilma käibemaksuta)

€ 0,116

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138BK,215
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Rull
3000 - 3000€ 0,095€ 285,00
6000 - 12000€ 0,09€ 270,00
15000 - 27000€ 0,072€ 216,00
30000 - 57000€ 0,068€ 204,00
60000+€ 0,064€ 192,00

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.48V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more