P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215

RS tootekood: 436-8091Bränd: NexperiaTootja Part nr.: BSS84,215
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Päritoluriik

China

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P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,381

tk (pakis 10) (ilma käibemaksuta)

€ 0,465

tk (pakis 10) (koos käibemaksuga)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
Valige pakendi tüüp

€ 0,381

tk (pakis 10) (ilma käibemaksuta)

€ 0,465

tk (pakis 10) (koos käibemaksuga)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 40€ 0,381€ 3,81
50 - 90€ 0,364€ 3,64
100 - 240€ 0,304€ 3,04
250 - 490€ 0,285€ 2,85
500+€ 0,266€ 2,66

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more