Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 81,00
€ 0,027 tk (rullis 3000) (ilma käibemaksuta)
€ 100,44
€ 0,033 tk (rullis 3000) (koos käibemaksuga)
3000
€ 81,00
€ 0,027 tk (rullis 3000) (ilma käibemaksuta)
€ 100,44
€ 0,033 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
China
Toote üksikasjad