Nexperia BST62,115 PNP Darlington Transistor, -1 A 80 V HFE:1000, 3-Pin SOT-89

RS tootekood: 165-9993Bränd: NexperiaTootja Part nr.: BST62,115
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Tehnilised dokumendid

Spetsifikatsioonid:

Transistor Type

PNP

Maximum Continuous Collector Current

-1 A

Maximum Collector Emitter Voltage

80 V

Maximum Emitter Base Voltage

-5 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

-1.9 V

Maximum Collector Base Voltage

-90 V

Maximum Collector Emitter Saturation Voltage

-1.3 V

Maximum Collector Cut-off Current

-50nA

Height

1.6mm

Width

2.6mm

Maximum Power Dissipation

1.3 W

Minimum Operating Temperature

-65 °C

Dimensions

4.6 x 2.6 x 1.6mm

Maximum Operating Temperature

+150 °C

Length

4.6mm

Päritoluriik

China

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,211

tk (rullis 1000) (ilma käibemaksuta)

€ 0,257

tk (rullis 1000) (koos käibemaksuga)

Nexperia BST62,115 PNP Darlington Transistor, -1 A 80 V HFE:1000, 3-Pin SOT-89

€ 0,211

tk (rullis 1000) (ilma käibemaksuta)

€ 0,257

tk (rullis 1000) (koos käibemaksuga)

Nexperia BST62,115 PNP Darlington Transistor, -1 A 80 V HFE:1000, 3-Pin SOT-89
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Transistor Type

PNP

Maximum Continuous Collector Current

-1 A

Maximum Collector Emitter Voltage

80 V

Maximum Emitter Base Voltage

-5 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

-1.9 V

Maximum Collector Base Voltage

-90 V

Maximum Collector Emitter Saturation Voltage

-1.3 V

Maximum Collector Cut-off Current

-50nA

Height

1.6mm

Width

2.6mm

Maximum Power Dissipation

1.3 W

Minimum Operating Temperature

-65 °C

Dimensions

4.6 x 2.6 x 1.6mm

Maximum Operating Temperature

+150 °C

Length

4.6mm

Päritoluriik

China

Toote üksikasjad

Darlington Transistors, Nexperia

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more