Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,077
tk (rullis 3000) (ilma käibemaksuta)
€ 0,094
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,077
tk (rullis 3000) (ilma käibemaksuta)
€ 0,094
tk (rullis 3000) (koos käibemaksuga)
3000
Osta lahtiselt
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 3000 - 3000 | € 0,077 | € 231,00 |
| 6000 - 6000 | € 0,073 | € 219,00 |
| 9000+ | € 0,071 | € 213,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products