Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
185 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 8.36
€ 0.418 Each (In a Pack of 20) (Exc. Vat)
€ 10.37
€ 0.518 Each (In a Pack of 20) (inc. VAT)
Standard
20
€ 8.36
€ 0.418 Each (In a Pack of 20) (Exc. Vat)
€ 10.37
€ 0.518 Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 40 | € 0.418 | € 8.36 |
| 60 - 100 | € 0.377 | € 7.54 |
| 120+ | € 0.334 | € 6.68 |
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
185 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


