Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118

RS Stock No.: 725-8376Brand: NexperiaManufacturers Part No.: PHN210T,118
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.45mm

Country of Origin

Thailand

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 1.82

€ 0.363 Each (In a Pack of 5) (Exc. Vat)

€ 2.26

€ 0.45 Each (In a Pack of 5) (inc. VAT)

Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118
Select packaging type

€ 1.82

€ 0.363 Each (In a Pack of 5) (Exc. Vat)

€ 2.26

€ 0.45 Each (In a Pack of 5) (inc. VAT)

Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 45€ 0.363€ 1.82
50 - 95€ 0.30€ 1.50
100 - 195€ 0.215€ 1.08
200 - 245€ 0.21€ 1.05
250+€ 0.205€ 1.02

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.45mm

Country of Origin

Thailand

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more