Nexperia N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 PMV213SN,215

RS tootekood: 725-8326Bränd: NexperiaTootja Part nr.: PMV213SN,215
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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Lao andmed ajutiselt ei ole saadaval.

€ 8,48

€ 0,424 tk (pakis 20) (ilma käibemaksuta)

€ 10,35

€ 0,517 tk (pakis 20) (koos käibemaksuga)

Nexperia N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 PMV213SN,215
Valige pakendi tüüp

€ 8,48

€ 0,424 tk (pakis 20) (ilma käibemaksuta)

€ 10,35

€ 0,517 tk (pakis 20) (koos käibemaksuga)

Nexperia N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 PMV213SN,215
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
20 - 20€ 0,424€ 8,48
40 - 80€ 0,318€ 6,36
100 - 180€ 0,242€ 4,84
200 - 380€ 0,228€ 4,56
400+€ 0,224€ 4,48

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more