Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 30,72
€ 0,512 tk (rullis) (ilma käibemaksuta)
€ 37,48
€ 0,625 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
60
€ 30,72
€ 0,512 tk (rullis) (ilma käibemaksuta)
€ 37,48
€ 0,625 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
60
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
60 - 120 | € 0,512 | € 15,36 |
150 - 270 | € 0,324 | € 9,72 |
300 - 570 | € 0,252 | € 7,56 |
600+ | € 0,198 | € 5,94 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad