NXP BF545A,215 N-Channel JFET, 30 V, Idss 2.0 → 6.5mA, 3-Pin SOT-23
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
2.0 → 6.5mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,85
tk (pakis 10) (ilma käibemaksuta)
€ 1,037
tk (pakis 10) (koos käibemaksuga)
10
€ 0,85
tk (pakis 10) (ilma käibemaksuta)
€ 1,037
tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 10 - 20 | € 0,85 | € 8,50 |
| 30 - 140 | € 0,606 | € 6,06 |
| 150 - 740 | € 0,489 | € 4,89 |
| 750 - 1490 | € 0,439 | € 4,39 |
| 1500+ | € 0,391 | € 3,91 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
2.0 → 6.5mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products