NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23

RS tootekood: 124-2284Bränd: NXPTootja Part nr.: BF861C,215
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Päritoluriik

China

Toote üksikasjad

N-channel JFET, NXP

JFET Transistors

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Lao andmed ajutiselt ei ole saadaval.

€ 0,304

tk (rullis 3000) (ilma käibemaksuta)

€ 0,371

tk (rullis 3000) (koos käibemaksuga)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23

€ 0,304

tk (rullis 3000) (ilma käibemaksuta)

€ 0,371

tk (rullis 3000) (koos käibemaksuga)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Päritoluriik

China

Toote üksikasjad

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more