Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Palun kontrollige hiljem uuesti.
€ 0,287
tk (rullis) (ilma käibemaksuta)
€ 0,35
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 0,287
tk (rullis) (ilma käibemaksuta)
€ 0,35
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
100 - 240 | € 0,287 | € 2,87 |
250 - 990 | € 0,253 | € 2,53 |
1000+ | € 0,204 | € 2,04 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Päritoluriik
China
Toote üksikasjad
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.