NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23

RS tootekood: 626-2412PBränd: NXPTootja Part nr.: BF861C,215
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

+25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Päritoluriik

China

Toote üksikasjad

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0,348

tk (rullis) (ilma käibemaksuta)

€ 0,425

tk (rullis) (koos käibemaksuga)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Valige pakendi tüüp

€ 0,348

tk (rullis) (ilma käibemaksuta)

€ 0,425

tk (rullis) (koos käibemaksuga)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Rull
10 - 90€ 0,348€ 3,48
100 - 240€ 0,275€ 2,75
250 - 990€ 0,242€ 2,42
1000+€ 0,195€ 1,95

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

+25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Päritoluriik

China

Toote üksikasjad

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.