Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
3.5 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
P.O.A.
10
P.O.A.
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
3.5 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C