onsemi 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin CP

RS tootekood: 792-5161Bränd: ON SemiconductorTootja Part nr.: 2SK3666-3-TB-E
brand-logo
View all in JFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

1.1pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Toote üksikasjad

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,386

tk (pakis 50) (ilma käibemaksuta)

€ 0,471

tk (pakis 50) (koos käibemaksuga)

onsemi 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin CP
Valige pakendi tüüp

€ 0,386

tk (pakis 50) (ilma käibemaksuta)

€ 0,471

tk (pakis 50) (koos käibemaksuga)

onsemi 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin CP
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
50 - 200€ 0,386€ 19,30
250 - 450€ 0,355€ 17,75
500 - 1200€ 0,333€ 16,65
1250 - 2450€ 0,307€ 15,35
2500+€ 0,282€ 14,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

1.1pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Toote üksikasjad

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more