Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
P.O.A.
Tootmispakett (Lint)
100
P.O.A.
Tootmispakett (Lint)
100
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C