Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Height
0.9mm
Päritoluriik
China
Toote üksikasjad
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,225
tk (rullis 3000) (ilma käibemaksuta)
€ 0,275
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,225
tk (rullis 3000) (ilma käibemaksuta)
€ 0,275
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Height
0.9mm
Päritoluriik
China
Toote üksikasjad