Dual P-Channel MOSFET, 5.5 A, 30 V, 8-Pin ECH onsemi ECH8667-TL-H

RS tootekood: 163-2132Bränd: ON SemiconductorTootja Part nr.: ECH8667-TL-H
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Height

0.9mm

Päritoluriik

China

Toote üksikasjad

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,225

tk (rullis 3000) (ilma käibemaksuta)

€ 0,275

tk (rullis 3000) (koos käibemaksuga)

Dual P-Channel MOSFET, 5.5 A, 30 V, 8-Pin ECH onsemi ECH8667-TL-H

€ 0,225

tk (rullis 3000) (ilma käibemaksuta)

€ 0,275

tk (rullis 3000) (koos käibemaksuga)

Dual P-Channel MOSFET, 5.5 A, 30 V, 8-Pin ECH onsemi ECH8667-TL-H
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Height

0.9mm

Päritoluriik

China

Toote üksikasjad

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more