N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-220 onsemi FCP16N60N

RS tootekood: 145-5392Bränd: onsemiTootja Part nr.: FCP16N60N
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

199 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

134.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

40.2 nC @ 10 V

Height

9.4mm

Series

SupreMOS

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 5,10

tk (torus 50) (ilma käibemaksuta)

€ 6,222

tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-220 onsemi FCP16N60N

€ 5,10

tk (torus 50) (ilma käibemaksuta)

€ 6,222

tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-220 onsemi FCP16N60N
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
50 - 50€ 5,10€ 255,00
100+€ 4,85€ 242,50

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

199 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

134.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

40.2 nC @ 10 V

Height

9.4mm

Series

SupreMOS

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.