Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
80 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
3.4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.75mm
Päritoluriik
Philippines
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,60
tk (rullis 3000) (ilma käibemaksuta)
€ 1,952
tk (rullis 3000) (koos käibemaksuga)
3000
€ 1,60
tk (rullis 3000) (ilma käibemaksuta)
€ 1,952
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
80 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
3.4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.75mm
Päritoluriik
Philippines