Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN onsemi FDMS86180
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Toote üksikasjad
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,55
tk (rullis 3000) (ilma käibemaksuta)
€ 1,891
tk (rullis 3000) (koos käibemaksuga)
3000
€ 1,55
tk (rullis 3000) (ilma käibemaksuta)
€ 1,891
tk (rullis 3000) (koos käibemaksuga)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Toote üksikasjad
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products