Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN onsemi FDMS86180

RS tootekood: 146-4098Bränd: ON SemiconductorTootja Part nr.: FDMS86180
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

151 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

138 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5mm

Typical Gate Charge @ Vgs

60 @ 10 V nC

Maximum Operating Temperature

+150 °C

Width

6mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.05mm

Series

PowerTrench

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N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 2,70

tk (pakis 10) (ilma käibemaksuta)

€ 3,294

tk (pakis 10) (koos käibemaksuga)

Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN onsemi FDMS86180
Valige pakendi tüüp

€ 2,70

tk (pakis 10) (ilma käibemaksuta)

€ 3,294

tk (pakis 10) (koos käibemaksuga)

Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN onsemi FDMS86180
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 90€ 2,70€ 27,00
100 - 490€ 2,25€ 22,50
500 - 990€ 2,05€ 20,50
1000 - 1490€ 1,75€ 17,50
1500+€ 1,70€ 17,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

151 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

138 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5mm

Typical Gate Charge @ Vgs

60 @ 10 V nC

Maximum Operating Temperature

+150 °C

Width

6mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.05mm

Series

PowerTrench

Toote üksikasjad

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more