N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F onsemi FDPF4D5N10C

RS tootekood: 181-1862Bränd: onsemiTootja Part nr.: FDPF4D5N10C
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

37.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Height

16.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Päritoluriik

China

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€ 2,70

tk (torus 1000) (ilma käibemaksuta)

€ 3,294

tk (torus 1000) (koos käibemaksuga)

N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F onsemi FDPF4D5N10C

€ 2,70

tk (torus 1000) (ilma käibemaksuta)

€ 3,294

tk (torus 1000) (koos käibemaksuga)

N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F onsemi FDPF4D5N10C
Lao andmed ajutiselt ei ole saadaval.

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

37.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Height

16.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Päritoluriik

China