onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS tootekood: 181-1929Bränd: onsemiTootja Part nr.: FGH75T65SQDNL4
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Päritoluriik

China

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Palun kontrollige hiljem uuesti.

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€ 10,00

tk (ilma käibemaksuta)

€ 12,20

tk (koos käibemaksuga)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Valige pakendi tüüp

€ 10,00

tk (ilma käibemaksuta)

€ 12,20

tk (koos käibemaksuga)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhind
1 - 9€ 10,00
10 - 99€ 8,90
100 - 249€ 6,30
250 - 499€ 6,10
500+€ 5,90

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Päritoluriik

China