Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorMaximum Continuous Collector Current
70 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
368 W
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
20.2 x 5.2 x 26.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 7,80
tk (torus 25) (ilma käibemaksuta)
€ 9,516
tk (torus 25) (koos käibemaksuga)
25
€ 7,80
tk (torus 25) (ilma käibemaksuta)
€ 9,516
tk (torus 25) (koos käibemaksuga)
25
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorMaximum Continuous Collector Current
70 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
368 W
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
20.2 x 5.2 x 26.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.