Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
5 → 30mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,294
tk (pakis 25) (ilma käibemaksuta)
€ 0,359
tk (pakis 25) (koos käibemaksuga)
25
€ 0,294
tk (pakis 25) (ilma käibemaksuta)
€ 0,359
tk (pakis 25) (koos käibemaksuga)
25
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
25 - 225 | € 0,294 | € 7,35 |
250 - 725 | € 0,141 | € 3,52 |
750 - 1475 | € 0,133 | € 3,32 |
1500 - 2975 | € 0,112 | € 2,80 |
3000+ | € 0,084 | € 2,10 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
5 → 30mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.