N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G

RS tootekood: 719-2780Bränd: ON SemiconductorTootja Part nr.: NDD03N50Z-1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

7.62mm

Minimum Operating Temperature

-55 °C

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,725

tk (pakis 5) (ilma käibemaksuta)

€ 0,885

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G

€ 0,725

tk (pakis 5) (ilma käibemaksuta)

€ 0,885

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 45€ 0,725€ 3,62
50 - 120€ 0,37€ 1,85
125 - 245€ 0,258€ 1,29
250 - 495€ 0,256€ 1,28
500+€ 0,253€ 1,26

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

7.62mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more