Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
500 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
18.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
7.62mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,35
tk (pakis 5) (ilma käibemaksuta)
€ 1,647
tk (pakis 5) (koos käibemaksuga)
5
€ 1,35
tk (pakis 5) (ilma käibemaksuta)
€ 1,647
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 1,35 | € 6,75 |
50 - 120 | € 0,702 | € 3,51 |
125 - 245 | € 0,452 | € 2,26 |
250 - 495 | € 0,416 | € 2,08 |
500+ | € 0,382 | € 1,91 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
500 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
18.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
7.62mm