Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Length
10.63mm
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.12mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,60
tk (pakis 2) (ilma käibemaksuta)
€ 1,952
tk (pakis 2) (koos käibemaksuga)
2
€ 1,60
tk (pakis 2) (ilma käibemaksuta)
€ 1,952
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 18 | € 1,60 | € 3,20 |
20 - 48 | € 0,929 | € 1,86 |
50 - 98 | € 0,812 | € 1,62 |
100 - 198 | € 0,708 | € 1,42 |
200+ | € 0,65 | € 1,30 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Length
10.63mm
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.12mm