N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F

RS tootekood: 178-4252Bränd: onsemiTootja Part nr.: NTB082N65S3F
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

4.58mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Päritoluriik

China

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€ 5,90

tk (rullis 800) (ilma käibemaksuta)

€ 7,198

tk (rullis 800) (koos käibemaksuga)

N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F

€ 5,90

tk (rullis 800) (ilma käibemaksuta)

€ 7,198

tk (rullis 800) (koos käibemaksuga)

N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

4.58mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more