N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK onsemi NTD5C434NT4G

RS tootekood: 178-4310Bränd: onsemiTootja Part nr.: NTD5C434NT4G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

80.6 nC @ 10 V

Forward Diode Voltage

1.2V

Height

2.25mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Vietnam

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 5,30

tk (rullis 2500) (ilma käibemaksuta)

€ 6,466

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK onsemi NTD5C434NT4G

€ 5,30

tk (rullis 2500) (ilma käibemaksuta)

€ 6,466

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK onsemi NTD5C434NT4G
Lao andmed ajutiselt ei ole saadaval.

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

80.6 nC @ 10 V

Forward Diode Voltage

1.2V

Height

2.25mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Vietnam