N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK onsemi NTD5C648NLT4G

RS tootekood: 178-4311Bränd: onsemiTootja Part nr.: NTD5C648NLT4G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

76 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

17 nC @ 4.5

Height

2.25mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

Vietnam

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,20

tk (rullis 2500) (ilma käibemaksuta)

€ 2,684

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK onsemi NTD5C648NLT4G

€ 2,20

tk (rullis 2500) (ilma käibemaksuta)

€ 2,684

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK onsemi NTD5C648NLT4G
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

76 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

17 nC @ 4.5

Height

2.25mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

Vietnam

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more