Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Width
1.7mm
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,091
tk (rullis) (ilma käibemaksuta)
€ 0,111
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
25
€ 0,091
tk (rullis) (ilma käibemaksuta)
€ 0,111
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
25
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Width
1.7mm
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad