Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,15
tk (rullis 1500) (ilma käibemaksuta)
€ 3,843
tk (rullis 1500) (koos käibemaksuga)
1500
€ 3,15
tk (rullis 1500) (ilma käibemaksuta)
€ 3,843
tk (rullis 1500) (koos käibemaksuga)
1500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V