N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G

RS tootekood: 172-8785Bränd: onsemiTootja Part nr.: NTMFS6H801NT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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€ 1,20

tk (rullis 1500) (ilma käibemaksuta)

€ 1,464

tk (rullis 1500) (koos käibemaksuga)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G

€ 1,20

tk (rullis 1500) (ilma käibemaksuta)

€ 1,464

tk (rullis 1500) (koos käibemaksuga)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G
Lao andmed ajutiselt ei ole saadaval.

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V