N-Channel MOSFET, 40 A, 650 V, 3 + Tab-Pin TO-220 onsemi NTP082N65S3F

RS tootekood: 172-8782Bränd: ON SemiconductorTootja Part nr.: NTP082N65S3F
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Width

4.7mm

Forward Diode Voltage

1.3V

Height

16.3mm

Minimum Operating Temperature

-55 °C

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€ 2,10

tk (torus 800) (ilma käibemaksuta)

€ 2,562

tk (torus 800) (koos käibemaksuga)

N-Channel MOSFET, 40 A, 650 V, 3 + Tab-Pin TO-220 onsemi NTP082N65S3F

€ 2,10

tk (torus 800) (ilma käibemaksuta)

€ 2,562

tk (torus 800) (koos käibemaksuga)

N-Channel MOSFET, 40 A, 650 V, 3 + Tab-Pin TO-220 onsemi NTP082N65S3F
Lao andmed ajutiselt ei ole saadaval.

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Width

4.7mm

Forward Diode Voltage

1.3V

Height

16.3mm

Minimum Operating Temperature

-55 °C