Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Päritoluriik
Malaysia
Toote üksikasjad
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,076
tk (rullis 4000) (ilma käibemaksuta)
€ 0,093
tk (rullis 4000) (koos käibemaksuga)
4000
€ 0,076
tk (rullis 4000) (ilma käibemaksuta)
€ 0,093
tk (rullis 4000) (koos käibemaksuga)
4000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Päritoluriik
Malaysia
Toote üksikasjad