Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
2
Height
1.05mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Malaysia
Toote üksikasjad
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,187
tk (rullis 1500) (ilma käibemaksuta)
€ 0,228
tk (rullis 1500) (koos käibemaksuga)
1500
€ 0,187
tk (rullis 1500) (ilma käibemaksuta)
€ 0,228
tk (rullis 1500) (koos käibemaksuga)
1500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
2
Height
1.05mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Malaysia
Toote üksikasjad