Dual N-Channel MOSFET, 127 A, 40 V, 8-Pin DFN onsemi NVMFD5C446NT1G

RS tootekood: 178-4296Bränd: onsemiTootja Part nr.: NVMFD5C446NT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

127 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

6.1mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.05mm

Päritoluriik

Malaysia

Lao andmed ajutiselt ei ole saadaval.

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Lao andmed ajutiselt ei ole saadaval.

€ 2,20

tk (rullis 1500) (ilma käibemaksuta)

€ 2,684

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 127 A, 40 V, 8-Pin DFN onsemi NVMFD5C446NT1G

€ 2,20

tk (rullis 1500) (ilma käibemaksuta)

€ 2,684

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 127 A, 40 V, 8-Pin DFN onsemi NVMFD5C446NT1G
Lao andmed ajutiselt ei ole saadaval.

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

127 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

6.1mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.05mm

Päritoluriik

Malaysia