Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NLT1G

RS tootekood: 178-4299Bränd: onsemiTootja Part nr.: NVMFD5C478NLT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

8.1 nC @ 10 V

Height

1.05mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,874

tk (rullis 1500) (ilma käibemaksuta)

€ 1,066

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NLT1G

€ 0,874

tk (rullis 1500) (ilma käibemaksuta)

€ 1,066

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NLT1G
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

8.1 nC @ 10 V

Height

1.05mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more