Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NT1G

RS tootekood: 178-4300Bränd: onsemiTootja Part nr.: NVMFD5C478NT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

6.3 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

Malaysia

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Lao andmed ajutiselt ei ole saadaval.

€ 0,888

tk (rullis 1500) (ilma käibemaksuta)

€ 1,083

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NT1G

€ 0,888

tk (rullis 1500) (ilma käibemaksuta)

€ 1,083

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NT1G
Lao andmed ajutiselt ei ole saadaval.

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

6.3 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

Malaysia