Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Number of Elements per Chip
1
Width
6.1mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
1.05mm
Päritoluriik
Malaysia
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,35
tk (rullis 1500) (ilma käibemaksuta)
€ 2,867
tk (rullis 1500) (koos käibemaksuga)
1500
€ 2,35
tk (rullis 1500) (ilma käibemaksuta)
€ 2,867
tk (rullis 1500) (koos käibemaksuga)
1500
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
1500 - 6000 | € 2,35 | € 3 525,00 |
7500+ | € 2,30 | € 3 450,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Number of Elements per Chip
1
Width
6.1mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
1.05mm
Päritoluriik
Malaysia