onsemi TIG058E8-TL-H IGBT, 150 A 400 V, 8-Pin ECH, Surface Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Package Type
ECH
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
2.9 x 2.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,234
tk (lindis) (ilma käibemaksuta)
€ 0,285
tk (lindis) (koos käibemaksuga)
10
€ 0,234
tk (lindis) (ilma käibemaksuta)
€ 0,285
tk (lindis) (koos käibemaksuga)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Package Type
ECH
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
2.9 x 2.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products