onsemi 2SK2394-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP

RS tootekood: 792-5155PBränd: onsemiTootja Part nr.: 2SK2394-7-TB-E
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

16 to 32mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Päritoluriik

China

Toote üksikasjad

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0,568

tk (rullis) (ilma käibemaksuta)

€ 0,693

tk (rullis) (koos käibemaksuga)

onsemi 2SK2394-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP
Valige pakendi tüüp

€ 0,568

tk (rullis) (ilma käibemaksuta)

€ 0,693

tk (rullis) (koos käibemaksuga)

onsemi 2SK2394-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Rull
25 - 100€ 0,568€ 14,20
125 - 225€ 0,523€ 13,08
250 - 600€ 0,491€ 12,28
625 - 1225€ 0,452€ 11,30
1250+€ 0,415€ 10,38

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

16 to 32mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Päritoluriik

China

Toote üksikasjad

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.