Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,627
tk (torus 60) (ilma käibemaksuta)
€ 0,765
tk (torus 60) (koos käibemaksuga)
60
€ 0,627
tk (torus 60) (ilma käibemaksuta)
€ 0,765
tk (torus 60) (koos käibemaksuga)
60
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
60 - 60 | € 0,627 | € 37,62 |
120 - 240 | € 0,59 | € 35,40 |
300+ | € 0,565 | € 33,90 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.