Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Length
2.9mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.97mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 14.30
€ 0.143 Each (In a Pack of 100) (Exc. Vat)
€ 17.73
€ 0.177 Each (In a Pack of 100) (inc. VAT)
Standard
100
€ 14.30
€ 0.143 Each (In a Pack of 100) (Exc. Vat)
€ 17.73
€ 0.177 Each (In a Pack of 100) (inc. VAT)
Stock information temporarily unavailable.
Standard
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 100 - 400 | € 0.143 | € 14.30 |
| 500 - 900 | € 0.123 | € 12.30 |
| 1000+ | € 0.107 | € 10.70 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Length
2.9mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.97mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


