Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Palun kontrollige hiljem uuesti.
€ 0,143
tk (pakis 100) (ilma käibemaksuta)
€ 0,174
tk (pakis 100) (koos käibemaksuga)
Standard
100
€ 0,143
tk (pakis 100) (ilma käibemaksuta)
€ 0,174
tk (pakis 100) (koos käibemaksuga)
Standard
100
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
100 - 400 | € 0,143 | € 14,30 |
500 - 900 | € 0,123 | € 12,30 |
1000+ | € 0,107 | € 10,70 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.