onsemi N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 BSS123LT1G

RS tootekood: 545-0135PBränd: onsemiTootja Part nr.: BSS123LT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 21,80

€ 0,218 tk (rullis) (ilma käibemaksuta)

€ 26,60

€ 0,266 tk (rullis) (koos käibemaksuga)

onsemi N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 BSS123LT1G

€ 21,80

€ 0,218 tk (rullis) (ilma käibemaksuta)

€ 26,60

€ 0,266 tk (rullis) (koos käibemaksuga)

onsemi N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 BSS123LT1G
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
100 - 240€ 0,218€ 2,18
250 - 490€ 0,188€ 1,88
500 - 990€ 0,166€ 1,66
1000+€ 0,151€ 1,51

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada