N-Channel MOSFET, 116 A, 80 V, 8-Pin PQFN8 onsemi FDMS4D5N08LCOS

RS tootekood: 195-2498Bränd: onsemiTootja Part nr.: FDMS4D5N08LC
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

116 A

Maximum Drain Source Voltage

80 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.85mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,40

tk (rullis 3000) (ilma käibemaksuta)

€ 1,708

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 116 A, 80 V, 8-Pin PQFN8 onsemi FDMS4D5N08LCOS

€ 1,40

tk (rullis 3000) (ilma käibemaksuta)

€ 1,708

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 116 A, 80 V, 8-Pin PQFN8 onsemi FDMS4D5N08LCOS
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

116 A

Maximum Drain Source Voltage

80 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.85mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more