Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
116 A
Maximum Drain Source Voltage
80 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
113.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5.85mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,40
tk (rullis 3000) (ilma käibemaksuta)
€ 1,708
tk (rullis 3000) (koos käibemaksuga)
3000
€ 1,40
tk (rullis 3000) (ilma käibemaksuta)
€ 1,708
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
116 A
Maximum Drain Source Voltage
80 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
113.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5.85mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V