N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C

RS tootekood: 181-1907Bränd: onsemiTootja Part nr.: FDP8D5N10C
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Päritoluriik

China

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,25

tk (pakis 2) (ilma käibemaksuta)

€ 2,745

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
Valige pakendi tüüp

€ 2,25

tk (pakis 2) (ilma käibemaksuta)

€ 2,745

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
2 - 8€ 2,25€ 4,50
10 - 98€ 1,95€ 3,90
100 - 248€ 1,55€ 3,10
250 - 498€ 1,45€ 2,90
500+€ 1,40€ 2,80

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more