Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
40 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
5.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Päritoluriik
Philippines
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,847
tk (rullis 3000) (ilma käibemaksuta)
€ 1,033
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,847
tk (rullis 3000) (ilma käibemaksuta)
€ 1,033
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
40 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
5.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Päritoluriik
Philippines