Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 onsemi FDY1002PZ

RS tootekood: 807-0713Bränd: onsemiTootja Part nr.: FDY1002PZ
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

830 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

625 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

1.7mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.2mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Series

PowerTrench

Height

0.6mm

Toote üksikasjad

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,472

tk (pakis 25) (ilma käibemaksuta)

€ 0,576

tk (pakis 25) (koos käibemaksuga)

Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 onsemi FDY1002PZ
Valige pakendi tüüp

€ 0,472

tk (pakis 25) (ilma käibemaksuta)

€ 0,576

tk (pakis 25) (koos käibemaksuga)

Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 onsemi FDY1002PZ
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
25 - 75€ 0,472€ 11,80
100 - 475€ 0,296€ 7,40
500 - 975€ 0,275€ 6,88
1000 - 2975€ 0,188€ 4,70
3000+€ 0,164€ 4,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

830 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

625 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

1.7mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.2mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Series

PowerTrench

Height

0.6mm

Toote üksikasjad

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more